ナノテクノロジープロセッシング 研究成果


　ストイキオメトリ制御、フォトキャパシタンス測定、ガリウムリン関連

　インジウムリン（InP）　関連

　長波長レーザーダイオード　（鉛テルル（PbTe））　関連

　高効率青色白色ダイオード　（亜鉛化セレンZnSe）　関連

ストイキオメトリ制御
フォトキャパシタンス測定（PHCAP）
ガリウムリン（GaP）関連
  1. T. Tanno, K. Suto, Y. Oyama, and J. Nishizawa, “Increase of GaP green LED efficiency with pre-annealing of the substrate,” Mater. Sci. in Semicond. Processing, 6(5-6), p. 433, (2004).
  2. T. Tanno, K. Suto, Y. Oyama, and J. Nishizawa, “Nonstoichiometric deep levels in Mg-doped GaP epitaxial layers,” Mater. Sci. in Semicond. Processing , 6(5-6), p. 437, (2004).
  3. T. Tanno, K. Suto, Y. Oyama and J. Nishizawa “Diffusion of nonstoichiometric defects in n-GaP crystals” Mater. Sci. in Semicond. Processing 6(5-6), p. 441, (2004).
  4. H. Kumano, T. Sasaki, and H. Soyama, “Evaluation of the effectiveness of back-side damage gettering in silicon introduced by a cavitating jet,” Appl. Phys. Lett., Vol. 85(17), p. 3935, (2004).
  5. T. Tanno, K. Suto, Y. Oyama, and J. Nishizawa, “Nonstoichiometric Deep Levels in Mg-Doped GaP Epitaxial Layers: Effects of Pre-Annealing of Substrates,” J. Electron. Mater. Vol. 32(3), p. 172, (2003).
  6. T. Tanno, K. Suto, Y. Oyama, and J. Nishizawa, “Nonstoichiometric defects in gallium phosphide and its detection,” Metals, Materials and Processes, Vol. 15(1-2), p. 43, (2003).

  7. J.Nishizawa, and T.Sasaki, “Lifetime control by Fe doping in n-type silicon,” Mater. Sci. in Semicond. Processing, Vol. 6, p. 273, (2003).
  8. T.J. Yu, T. Tanno, K. Suto, and J. Nishizawa, “Controlled Vapor-Pressure Heat-Treatment Effect on Deep Levels in Liquid-Encapsulated Czochralski-Grown GaP Crystals,” J. Electron. Mater., Vol. 31(6), p. 591, (2002).

  9. T.J. Yu, K. Suto, and J. Nishizawa, “Investigation of deep levels in GaP liquid phase epitaxial layers on substrates with vapor pressure heat treatment,” Mat. Res. Soc. Symp. Proc., 588, 61（1999）
  10. T.Sasaki, J.Nishizawa, and M.Esashi, “Deep levels and minority carrier lifetime in proton irradiated silicon pin diode,” J. Appl. Phys., Vol. 83, p. 4069, (1998).

  11. J. Nishizawa, Y. Oyama, and K. Dezaki, “Stoichiometry-dependent deep levels in n-type GaAs,”J. Appl. Phys., Vol. 67, p. 1884, (1990).
  12. J. Nishizawa, Y.J. Shi, K. Suto and M. Koike, “Photocapacitance study of deep levels due to nonstoichiometry in nitrogen-free GaP light-emitting diodes,” J. Appl. Phys., Vol. 53, p. 3878, （1982）.

  13. J. Nishizawa, Y. Kobayashi, and Y. Okuno, “Balance Method for Experiments under Controlled Vapor Pressure,” Jpn. J. Appl. Phys., Vol. 19, p. 345, （1980）.

  14. J. Nishizawa, M. Koike, K. Miura, and Y.Okuno, “Deep Levels Studies of N-Free and N-Doped GaP grown by TDM-CVP,” Jpn. J. Appl. Phys., Vol. 19, p. 25, （1980）.
  15. J. Nishizawa, T. Okuno, and H Tadano, “Nearly perfect crystal growth of III-V compounds by the temperature difference method under controlled vapour pressure,” J. Cryst. Growth, Vol. 31, p. 215, （1975）.
  16. J. Nishizawa, and Y. Okuno, “Liquid Phase Epitaxy of GaP by a Temperature Difference Method under Controlled Vapor Pressure,” IEEE Trans. Electron. Devices ED, Vol. 22, p. 716, （1975）.


インジウムリン（InP）関連

  1. Y. Oyama, J. Nishizawa, T.Kimura, and T.Tanno, "Dislocation-induced deep electronic states in InP," Physical Review, Vol. B 74(23), p. 235210, (2006).　
  2. T. Kochiya, Y. Oyama, T. Kimura, K. Suto, and J. Nishizawa,　“Dislocation-free large area InP ELO layers by liquid phase epitaxy,” J. Cryst. Growth., Vol. 281, p. 263, (2005).
  3. T. Kochiya, Y. Oyama, K. Suto, and J. Nishizawa, “Angular dependence of lateral growth rate in liquid phase epitaxy of InP (001) and (111)A,B surfaces,” Materials Metals and Processes (submitted)
  4. T. Kochiya, Y. Oyama, K. Suto, and J. Nishizawa, “Epitaxial lateral overgrowth and area selective epitaxy of InP and InGaAs by liquid phase epitaxy on low index surfaces,” Materials Metals and Processes (submitted)
  5. Y. Oyama, T. Kochiya, K.suto, and J. Nishizawa,　“Angular dependence of lateral growth rate and kink-step structure on InP surface during liquid phase epitaxial condition” J. Cryst. Growth., Vol. 275, p. e97, (2005).
  6. T. Kochiya, Y. Oyama, K. Suto, and J. Nishizawa, “Anisotropy of lateral growth rate in liquid phase epitaxy of InP and its association with kink-step structures on the surface,” Appl. Surf. Sci., Vol. 237, p. 235, (2004).
  7. T. Kochiya, Y. Oyama, K. Suto, and J. Nishizawa, “Epitaxial lateral overgrowth of InP by liquid-phase epitaxy on InP (001), (111)A,B and (110) surfaces,” Mater. Sci. in Semicond. Processing, Vol. 6, p. 465, (2003).

    Y. Oyama, T. Kochiya, K. Suto, and J. Nishizawa, “Angular dependence of lateral growth rate on the InP (111)A,B surface by liquid-phase epitaxy,” J. Cryst. Growth, Vol. 258, p. 41, (2003).
  8. T. Kochiya, Y. Oyama, K. Suto, and J. Nishizawa, “Anisotropy of lateral growth rate in liquid phase epitaxy of {001} InP,” Appl. Surf. Sci., Vol. 216, p. 78, (2003).
  9. Y. Oyama, T. Kochiya, K. Suto, and J. Nishizawa, “Area-selective epitaxy and epitaxial lateral overgrowth of InP by liquid phase epitaxy on three integral axes,” J. Cryst. Growth, Vol. 245, p. 181, (2002).
  10. Y. Oyama, T. Kochiya, K. Suto, and J. Nishizawa, “Determination of Angular Dependence of Lateral Growth Rate in Liquid Phase Epitaxy of (001) InP,” J. Cryst. Growth, Vol. 267, p. 243, (2002).
  11. Y. Oyama, T. Suzuki, K. Suto, and J. Nishizawa, “Observation of anisotropic initial growth nucleation in liquid phase epitaxy of InP,”J. Cryst. Growth, Vol. 222, p. 64, (2001).
  12. J. Nishizawa, and Y. Oyama, “Stoichiometry of Ⅲ-V compounds,”Mater. Sci. Eng., Vol. R12, p. 273, (1994).
  13. J. Nishizawa, H. Sakuraba, and Y. Oyama, “Molecular layer epitaxy of GaAs,”Thin Solid Films, Vol. 225, p. 1, (1993).
  14. J. Nishizawa and H. Sakuraba, “Surface reaction mechanism in Si and GaAs crystal growth”Surf. Sci. Rep. 15, 137 (1992)
  15. Y. Nonomura, Y. Okuno and J. Nishizawa, “Surface Morphology of GaAs Grown by Vapor Phase Epitaxy”J. Cryst. Growth, 46, 795 (1979)
  16. J. Nishizawa, Y. Kato and M. Shimbo, “Anisotropy in the Growth Rate of Silicon Deposited by Reduction of silicon Tetrachloride”J. Cryst. Growth, 31, 290 (1975)
  17. J. Nishizawa, Aspect of Si epitaxy, in: C. H. L. Goodman (Ed.), Crystal Growth: Theory and Techniques, Vol. 2, Plenum Press, New York, London (1974).



長波長レーザーダイオード　（鉛テルル（PbTe））　関連


  1. A. Yasuda, K. Suto, Y. Oyama, Y. Takahashi and J. Nishizawa “Growth of In-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure and the properties of laser diodes” J. Electron. Mater. (submitted)
  2. A. Yasuda, Ken Suto, Y. Oyama, and J. Nishizawa “High quality PbTe and PbSnTe single crystal and epitaxial growth by stoichiometry-control” Metals Materials And Processes 15, 225 (2003)

  3. A. Yasuda, K. Suto and J. Nishizawa “Properties of Bi-doped PbTe epitaxial layers and pn junction diodes grown by TDM-CVP” Mater. Sci. in Semicond. Processing 6, 487 (2003)
  4. K. Suto, J. Nishizawa and A. Yasuda “Calculation of the optimum vapor pressure for stoichiometry in PbTe and PbSnTe” Mater. Sci. in Semicond. Processing 6, 289 (2003)
  5. W. Tamura, A. Yasuda, K. Suto, M. Hosokawa, O. Itoh and J. Nishizawa “Properties of Bi-doped PbTe layers grown by liquid phase epitaxy under controlled Te vapor pressure” J. Electron. Mater. 32, 1079 (2003)
  6. W. Tamura, A.Yasuda, K. Suto. O. Itoh and J. Nishizawa “Electroluminescence and lasing properties of highly Bi-doped PbTe epitaxial layers grown by Temperature Difference Method under Controlled Vapor Pressure” J. Electron. Mater. 32, 39 (2003)

  7. Nugraha, W. Tamura, O. Ito, T. Amemiya, K. Suto and J. Nishizawa “Growth and ｃｒｙｓｔal properties of Tl doped PbTe bulk crystals grown by Bridgman method under Pb and Te vapor pressure” J.Cryst.Growth 222, 38 (2001)
  8. Nugraha, W. Tamura, O. Ito, K.Suto and J.Nishizawa “Growth of Pb1-xSnxTe epitaxial layers by temperature difference under controlled vapor pressure liquid phase epitaxy” J.Cryst.Growth 219, 32 (2000)

  9. Nugraha, W. Tamura, O. Ito, K. Suto and J. Nishizawa “Te vapor pressure dependence of the pn junction properties of PbTe liquid phase epitaxial layers” J. Electron. Mater. 27, 438 (1998)
  10. W. Tamura, O. Ito, Nugraha, K. Suto and J. Nishizawa “Electroluminescence properties of PbTe pn junctions fabricated under controlled Te vapor pressures” J. Electron. Mater. 28, 907 (1998)
  11. Nugraha, O. Itoh, K. Suto and J. Nishizawa “Growth and electrical properties of PbTe epitaxial layers grown by temperature difference method under controlled vapor pressure liquid phase epitaxy” J. Cryst. Growth 163, 353 (1996)
  12. Nuguraha, K. Suto. O. Itoh, J. Nishizawa and Y. Yokota “Growth and electrical properties of PbTe bulk crystals grown by the Bridgman method under controlled tellurium or lead vapor pressure” J. Cryst. Growth 165, 402 (1996)



高効率青色白色発光ダイオード　（亜鉛化セレン（ZnSe））関連

  1. H Tamura, K. Suto and J. Nishizawa “Se and Zn vapor pressure control in ZnSe single crystal growth by the sublimation method” J. Cryst. Growth 209, 675 (2000)
  2. F. Sakurai, K. Suto, J. Nishizawa, Y. Oyama, M. Motozawa and Y. Hara “Impurity Distribution in ZnSe p-n Junctions Prepared by Ga Diffusion in p-Type ZnSe” J. Electrochem. Soc. 147(2), 747 (2000)
  3. F. Sakurai, M. Motozawa, K. Suto and J. Nishizawa “Liquid phase epitaxial p-type ZnSe growth from a Se solution and fabrication of pn junctions with diffused n-type layers” J. Cryst. Growth 172, 75 (1997)

  4. . Sakurai, H. Fujishiro, K. Suto and J. Nishizawa “ZnSe epitaxial growth by the temperature difference method under controlled vapor pressure (TDM-CVP) using Se solvent” J. Cryst. Growth 112, 153 (1991)

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