ナノテクノロジープロセッシング 研究成果


　理想型静電誘導トランジスタ（ISIT）関連

　半導体ラマン素子関連

　　

理想型静電誘導トランジスタ（ISIT）関連

  1. J. Nishizawa, P. Plotka, and T. Kurabayashi, “Ballistic and Tunneling GaAs Static Induction Transistors:Nano-Devices for THz Electronics,”IEEE Transactions on Electron Devices, Vol. 49, pp. 1102-1111, (2002).
  2. J. Nishizawa, P. Plotka, and T. Kurabayashi, “Light emission from tunnelling mode GaAs static induction transistor,” IEE Proc. Circuits, Devices and Systems, Vol. 146, pp. 27-30, (1999).
  3. P. Plotka, T. Kurabayashi, Y. Oyama, and J. Nishizawa, “Ideal static induction transistor implemented with Molecular layer epitaxy,” Applied Surface Science, Vol. 82/83, pp. 91-96,(1994).
  4. J.Nishizawa, “(Invited)Recent Progress and Potential SIT,” Proc. of 1979 Internat. Conf. on Solid State Devices, pp. 3-11, (1979).
  5. J. Nishizawa, T. Terasaki, and J. Shibata, “Field-Effect transistor versus Analog Transistor(Static Induction Transistor),” IEEE Trans. on Electron Devices, Vol. ED-22, pp. 185-197, (1975).
  6. 西澤潤一、渡辺寧、特許第205068号.「高抵抗領域を有する半導体器具」

半導体ラマン素子関連

  1. S. Saito, K. Suto, T. Kimura, and J. Nishizawa, “80-ps and 4-ns Pulse-Pumped Gains in a GaP-AlGaP Semiconductor Raman Amplifier,” IEEE Photo. Tech. Lett., Vol. 16, pp. 395-397, (2004).
  2. S. Saito, J. Nishizawa, K. Suto, and T. Kimura, “The Structure and Maximal Gain of CW-Pumped GaP-AlGaP Semiconductor Raman Amplifier With Tapers on Both Sides” IEEE Photo. Tech. Lett., Vol. 16 ,pp. 48-50, (2004).
  3. T. Tanabe, T. Kimura, T. Ohtani, K. Suto, and J. Nishizawa, “Raman spectra of GaPAs-GaP heterostructure waveguides,” Materials Science in Semiconductor Processing, Vol. 6, pp. 445-447, (2003).
  4. S. Saito, T. Kimura, T. Tanabe, K. Suto, Y. Oyama, J. Nishizawa“'Fabrication and Characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers,” Journal of Lightwave Technology, Vol. 21, pp. 170-175, (2003).
  5. T. Tanabe, K. Suto, T. Saito, T. Kimura, Y. Oyama, and J. Nishizawa, “Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides,” Journal of Applied Physics, Vol. 93, pp. 43-46, (2003).
  6. K. Suto, T. Saito, T. Kimura, J. Nishizawa, and T. Tanabe, “Semiconductor raman amplifier for terahertz bandwidth optical communication,”Journal of Lightwave Technology, Vol. 20, pp. 705-711, (2002).
  7. T. Saito, K. Suto, T. Kimura, A. Watanabe, and J. Nishizawa, “Raman Gain And Optical Loss In GaP-AlGaP Waveguides,” J. Appl. Phys., Vol. 87, pp. 3399-3403, (2000).
  8. T. Saito, K. Suto, T. Kimura, and J. Nishizawa, “Gain Of High Intensity Pulse-pumped GaP-AlGaP Waveguide Raman Amplifier,” IEE Proc.- Optoelectron, Vol. 146, pp. 209-212, (1999).
  9. K. Suto, T. Kimura, and T. Saito, “Output Power Saturation Characteristics Of The CW-operated Semiconductor Raman Laser,” IEE Proc.-Optoelectron, Vol. 145, pp. 243-247, (1998).
  10. K. Suto, T. Kimura, and J. Nishizawa, “Semiconductor Raman laser pumped with a fundamental mode,” IEE Proc.-J, Vol. 139, pp. 407-412, (1992).
  11. K. Suto, and J. Nishizawa, “Low-threshold semiconductor Raman laser,” IEEE J. Quantum Electron., Vol. QE-19, pp. 1251-1254, (1983).
  12. J. Nishizawa, and K. Suto, “Semiconductor Raman laser,” J. Appl. Phys., Vol. 51, pp. 2429-2431, (1980).



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