ナノテクノロジープロセッシング 研究成果


　理想型静電誘導トランジスタ（ISIT）関連

　半導体ラマン素子関連

　タンネットダイオード関連

　分子層エピタキシャル成長（MLE）関連

理想型静電誘導トランジスタ（ISIT）関連
  1. J. Nishizawa, P. Plotka and T. Kurabayashi, “Ballistic and Tunneling GaAs Static Induction Transistors:Nano-Devices for THz Electronics,” IEEE Transactions on Electron Devices, Vol. 49, pp.1102-1111, (2002).
  2. J. Nishizawa, P. Plotka and T. Kurabayashi, “Light emission from tunnelling mode GaAs static induction transistor,” IEE Proc. Circuits, Devices and Systems, Vol. 146, pp. 27-30, (1999).
  3. P. Plotka, T. Kurabayashi, Y. Oyama and J. Nishizawa, “Ideal static induction transistor implemented with Molecular layer epitaxy,” Applied Surface Science, 82/83, pp. 91-96, (1994).
  4. J. Nishizawa, “(Invited)Recent Progress and Potential SIT,” Proc. of 1979 Internat. Conf. on Solid State Devices, Tokyo, Japan, pp. 3-11, (1979).
  5. J. Nishizawa, T. Terasaki and J. Shibata, “Field-Effect transistor versus Analog Transistor(Static Induction Transistor),” IEEE Trans. on Electron Devices, ED-22, pp. 185-197, (1975).
  6. 西澤潤一、渡辺寧、特許第205068号.「高抵抗領域を有する半導体器具」


半導体ラマン素子関連

  1. S. Saito, K. Suto, T. Kimura, and J. Nishizawa, “80-ps and 4-ns Pulse-Pumped Gains in a GaP-AlGaP Semiconductor Raman Amplifier,” IEEE Photo. Tech. Lett., Vol. 16, pp. 395-397, (2004).
  2. S. Saito, J. Nishizawa, K. Suto, and T. Kimura, “The Structure and Maximal Gain of CW-Pumped GaP-AlGaP Semiconductor Raman Amplifier With Tapers on Both Sides,” IEEE Photo. Tech. Lett., Vol. 16, pp. 48-50, (2004).
  3. T. Tanabe, T. Kimura, T. Ohtani, K. Suto and J. Nishizawa, “Raman spectra of GaPAs-GaP heterostructure waveguides,” Materials Science in Semiconductor Processing Vol. 6, pp. 445-447, (2003).
  4. S. Saito, T. Kimura, T. Tanabe, K. Suto, Y. Oyama, and J. Nishizawa, “Fabrication and Characteristics of GaP-AlGaP tapered waveguide semiconductor Raman amplifiers,” Journal of Lightwave Technology, Vol. 21, pp. 170-175, (2003).
  5. T. Tanabe, K. Suto, T. Saito, T. Kimura, Y. Oyama, and J. Nishizawa, “Characteristics of time-gated Raman amplification in GaP-AlGaP semiconductor waveguides,” Journal of Applied Physics Vol. 93, pp. 43-46, (2003).
  6. K. Suto, T. Saito, T. Kimura, J. Nishizawa, and T. Tanabe, “Semiconductor raman amplifier for terahertz bandwidth optical communication,” Journal of Lightwave Technology, Vol. 20, pp. 705-711, (2002).

  7. T. Saito, K. Suto, T. Kimura, A. Watanabe and J. Nishizawa, “Raman Gain And Optical Loss In GaP-AlGaP Waveguides,” J. Appl. Phys., Vol. 87, pp. 3399-3403, (2000).
  8. T. Saito, K. Suto, T. Kimura, and J. Nishizawa, “Gain Of High Intensity Pulse-pumped GaP-AlGaP Waveguide Raman Amplifier,” IEE Proc.- Optoelectron, Vol. 146, pp. 209-212, (1999).
  9. K. Suto, T. Kimura and T. Saito, “Output Power Saturation Characteristics Of The CW-operated Semiconductor Raman Laser”IEE Proc.-Optoelectron, 145 (1998), 243-247.
  10. K. Suto, T. Kimura and J. Nishizawa, “Semiconductor Raman laser pumped with a fundamental mode,” IEE Proc.-J, Vol. 139, pp. 407-412, (1992).

  11. K. Suto and J. Nishizawa, “Low-threshold semiconductor Raman laser,” IEEE J, Quantum Electron, QE-19 pp. 1251-1254, (1983).
  12. J. Nishizawa and K. Suto, “Semiconductor Raman laser,” J. Appl. Phys. Vol. 51, pp. 2429-2431, (1980).


タンネットダイオード関連


  1. J. Nishizawa, P. Plotka, H. Makabe, and T. Kurabayashi, “GaAs TUNNETT Diodes Oscillating at 430-655 GHz in CW Fundamental Mode,” IEEE Microwave And Wireless Components Letters, Vol. 15, pp. 597-599, (2005).

  2. J. Nishizawa, P. Plotka, H. Makabe, and T. Kurabayashi, “290-393 GHz CW fundamental-mode oscillation from GaAs TUNNETT diode,” Electronics Letters, Vol. 41, pp. 441-442, (2005).

  3. J. Nishizawa, A. Murai, H. Makabe, O. Ito, T. Kimura, K. Suto, and Y. Oyama, “100Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation,” Solid-State Electronics Vol. 48, pp. 2251-2254, (2004).
  4. P. Plotka, J. Nishizawa, T. Kurabayashi, and H. Makabe, “GaAs Fundamental-Mode CW TUNNETT Oscillators for THz-Band Applications,” Technical Digest of 11th.International Conference on Terahertz Electronics, THz 2003, p 38, (2003).

  5. P. Plotka, J. Nishizawa, T. Kurabayashi, and H. Makabe, “240-325GHz GaAs CW Fundamental-Mode TUNNETT Diodes Fabricated With Molecular Layer Epitaxy,” IEEE Trans. Electron Devices, Vol. 50, pp. 867-873, (2003).

  6. J. Nishizawa, H. Makabe, F. Matsumoto, P. Plotka, and T. Kurabayashi, “Oscillation frequency control of 60 GHz-band TUNNETT diodes,” Electronics Letters, Vol. 38, pp. 660-661, (2002).

  7. J. Nishizawa, “TUNNETT as an Efficient Millimeter Wave Source,” in Proc. 7th. Int. Symp. Recent Advances in Microwave Technol, pp. 311-315, (1999).

  8. J .Nishizawa, and K. Motoya, “The CW GaAs TUNNETT Diodes,” in K.J.Button (ed.), "Topics in Millimeter Wave Technology", Vol. 2, Academic Press, pp. 1-46, (1988).

  9. J. Nishizawa, “TUNNETT,” in Yagi Symp. on Advanced Technology Bridging the Gap Between Light and Microwaves Dig., pp. 27-35, (1990).

  10. J. Nishizawa, K. Motoya, and K. Suzuki, “GaAs p+-n+-i(n)-n+ TUNNETT Diode, in Proc. 10th. Europ”. Microwave Conf., pp. 667-671, (1980).

  11. J. Nishizawa, K. Motoya, and Y. Okuno, “Submillimeter Wave Oscillation from GaAs TUNNETT Diode,” in Proc. 9th. Europ. Microwave Conf., pp. 463-467, (1979).

  12. J.Nishizawa, K.Motoya, and Y.Okuno, “GaAs TUNNETT Diodes”, IEEE Trans. Microwave Theory Tech., Vol. MTT-26, pp. 1029-1035, (1978).
  13. T. Okabe, S. Takamiya, K. Okamoto, and J. Nishizawa, “Bulk oscillation by tunnel injection”, IEDM Tech. Dig., (1968)
  14. T.Okabe, S.Takamiya, K.Okamoto, and J. Nishizawa, “Bulk oscillation by tunnel injection”,RIEC Technical Rep., TR-31,pp. 1-18, (1968).

  15. J. Nishizawa, and Y. Watanabe, “High frequency properties of the avalanching negative resistance diode” Sci. Rep. Res. Inst. Tohoku Univ. B-(Comm), Vol. 10, No. 2, pp. 91-108, (1958).

分子層エピタキシャル成長（MLE）関連


ガリウム砒素　（GaAｓ）　関連

  1. T. Ohno, Y. Oyama,K. Saito, K. Suto, and J. Nishizawa, “Impurity doping in molecular layer epitaxyof GaAs and its application to ultrashallow sidewall tunnel junctions,” ThinSolid Films, pp. 464-465, pp. 123-127, (2004).

  2. Y. Oyama, T. Ohno, K. Suto, and J. Nishizawa, “Effects of AsH3 surface treatment for the improvement of ultrashallow area-selective regrown GaAs sidewall tunnel junctions,” Journal of Electrochemical Society, Vol. 151, pp. G131-G135, (2004).

  3. Y. Oyama, T. Ohno, K. Tezuka, K. Suto, and J. Nishizawa, “Ultrashallow GaAs sidewall tunnel junctions implemented with low-temperature area selective growth” Compound Semiconductor 2002 Institute of Physics Conference Series, Vol. 174, pp. 9-12, (2003).

  4. Y. Oyama, T. Ohno, K. Suto, and J. Nishizawa, “Be doping in GaAs by intermittent AsH3/TEG supply in an ultra-high vaccum,” Journal of Crystal Growth, Vol. 259, pp. 61-68, (2003).

  5. T .Ohno, Y. Oyama, K. Suto, and J. Nishizawa, “Effect of surface stoichiometry on Be doping in GaAs by intermittent supply of AsH3 and TEG in an ultra-high vaccum,” Materials Science in Semiconductor Processing, Vol. 6, pp. 421-424, (2003).

  6. T. Ohno, Y. Oyama, K. Suto, and J. Nishizawa, “Effects of AsH3 surface treatment for the improvement of ultra-shallow area-selective regrown GaAs sidewall tunnel junction,” Materials Science in Semiconductor Processing,Vol. 6, pp. 417-420, (2003).

  7. T. Ohno, Y. Oyama, K. Tezuka, K. Suto, and J. Nishizawa, “Area-selective regrowth followed by AsH3 treatment and its application for ultra-shallow GaAs sidewall tunnel junctions,” Applied Surface Science, Vol. 216, pp. 549-553, (2003).

  8. T. Ohno, Y. Oyama, K. Suto, and J. Nishizawa, “Application of low-temperature area-selective re-grown molecular layer epitaxy for sidewall nanometer GaAsunneljunctions,” Metals Materials And Processes, Vol. 15(1-2), pp. 35-42, (2003).

  9. Y. Oyama, T. Ohno, K. Suto, and J. Nishizawa, “Improved Impurity Incorporation by Alternate Te and S doping in GaAs grown by molecular layer epitaxy,” Metals Materials And Processes, Vol. 15(1-2), pp. 27-34, (2003).

  10. J. Nishizawa, T. Kurabayashi, P. Plotka, H. Kikuchi, and T. Hamano, “Growth Rate Reduction in Self-Limiting Growth of Doped GaAs by Molecular Layer Epitaxy,” Material Science in Semiconductor Processing, Vol. 6, pp. 429-431 (2003).

  11. Y.Oyama, T. Ohno, K. Tezuka, K. Suto, and J. Nishizawa, “Application of low-temperature area-selective regrowth for ultrashallow sidewall GaAs tunneljunctions,” Applied Physics Letters, Vol. 81, pp. 2563-2565, (2002).

  12. J. Nishizawa, T. Kurabayashi, P. Plotka, H. Kikuchi, and T. Hamano, “Self-limiting growth of GaAs with doping by molecular layer epitaxy using triethyl-gallium and AsH3,” J. Crystal Growth, Vol. 244, pp. 236-242, (2002).

  13. T. Kurabayashi, K. Kono, H. Kikuchi, J. Nishizawa, and M. Esashi, “Self-limiting growth of GaAs molecular layer epitaxy using triethyl-gallium(TEG) andAsH3,” J. Crystal Growth, Vol. 229, pp. 152-157, (2001).

  14. J. Nishizawa, H. Abe, and T. Kurabayashi, “Doping in Molecular Layer Epitaxy,” J. Electrochem. Soc., Vol. 136, pp. 478-484, (1989).

  15. J. Nishizawa, H. Sakuraba and T. Kurabayashi, “Surface reaction of trimethylgallium on GaAs,” J. Vacuum Science Technology, Vol. B 14, pp. 136-146, (1996).

  16. J. Nishizawa and T. Kurabayashi, “Effect of TMG/AsH3 ratio on GaAs molecular layer growth,” J. Vacuum Science Technology, Vol. B 13 , pp. 1024-1029, (1995).
  17. J. Nishizawa, H. Abe, and T. Kurabayashi, “Molecular Layer Epitaxy,” J. Electrochem. Soc. Vol. 132,pp.1197-1200, (1985).

  18. 西澤潤一, 阿部仁志, 倉林徹, “分子層エピタキシー Molecular layer epitaxy,” 信学技報　SSD84-55,　pp. 73-78, (1984).

  19. J. Nishizawa and Y. Kokubun, “Recent Progress in dow Temperature Photochemical Process,” Extended Abstract of 16th Int. Conf. on Solid State Devices and Materials, p. 1, (1984).

インジウムリン　（InP）　関連

  1. N. Otsuka, J. Nishizawa, H. Kikuchi, and Y. Oyama, “Expanted self-limiting growth condition of InP using alternate trimethylindium and tertiarybutyl-phosphine supply in ultrahigh vacuum,” J. Crystal Growth, Vol 209, (2000),
  2. N. Otsuka, J. Nishizawa, H. Kikuchi, and Y. Oyama, “Self-limiting growth conditions on (001) InP by alternate triethylindium and tertiarybutyl phosphine supply in ultrahigh vacuum,” J. Vac. Sci. Technol., Vol. A 17, pp. 3008-3018, (1999).

  3. N. Otsuka, J. Nishizawa, Y. Oyama, H. Kikuchi, and K. Suto, “Digital Etching of InP by Intermittent Injection of Trisdimethylaminophosphorus in Ultrahigh Vacuum,” J. Electrochem. Soc., Vol. 146, p. 547 (1999).

  4. N. Otsuka, Y. Oyama, H. Kikuchi, J. Nishizawa, and K. Suto, “Digital Etching of (001) InP Substrate by Intermittent Injection of Tertiarybutylphosphine in Ultrahigh vacuum,” Jpn. J. Appl. Phys., Vol. 37, p. L1509, (1998).


シリコン　（Si）及び　酸化シリコン（SiO2）　関連

  1. J. Nishizawa, T. Kurabayashi, K. Kanamoto, T. Yoshida, and T. Oizumi , “Low-temperature deposition of SiO2 films using plasma enhanced oxygen with reduction of oxygen-originated damage,” Material Science in Semiconductor Processing, Vol. 6, pp. 363-366, (2003).

  2. K. Kanamoto, T. Yoshida, T. Oizumi, A. Murai, T. Kurabayashi, and J. Nishizawa, “Low-Temperature Formation of Thin-Gate SiO2 Films by the Ultrahigh-Vacuum Chemical vapor Deposition with Reduced Subcutaneous oxidation Using Remote-Plasma-Activated Oxygen and Si2H6,”Jpn. J. Appl. Phys., Vol. 40, pp. 6059-6064, (2001).
  3. K. Kanamoto, T. Yoshida, T. Oizumi, A. Murai, T. Kurabayashi, and J. Nishizawa, “Oxygen-originated donor generation and its suppression in the formation of the gate oxide films using plasuma activated oxygen,” Proceedings of symposium on dry process, pp. 79-83, (2000).

  4. K. Ohtsuka, T. Yoshida, T. Oizumi, A. Murai, T. Kurabayashi, and J. Nishizawa, “Low-temperature deposition of Si and SiO2 thin-film layers in an ultrahigh vacuum system,” J. Crystal Growth, Vol. 209, pp.331-334, (2000).
  5. J. Nishizawa, T. Kurabayashi, T. Oizumi, A. Murai, and T. Yoshida, “Doping Technology for Silicon Thin Films Grown by Temperature-Modulation Molecular Layer Epitaxy,” J. Electrochem. Soc., Vol. 149, pp. G399-G402, (2002).

  6. J. Nishizawa, A. Murai, T. Oizumi, T. Kurabayashi, K. Kanamoto, and T. Yoshida, “Surface reaction and selective growth investigation of temperature modulation Si molecular-layer epitaxy,” J. Crystal Growth, Vol. 233, pp. 161-166, (2001).
  7. J. Nishizawa, A. Murai, T. Oizumi, T. Kurabayashi, K. Kanamoto, and T. Yoshida, “Surface morphology investigation of Si thin film grown by temperature modulation Si molecular -layer epitaxy,” J. Crystal Growth, Vol. 226, pp. 39-46, (2001).
  8. J. Nishizawa, A. Murai, T. Ohizumi, T. Kurabayashi, K. Ohtsuka, and T. Yoshida, “Observation and control of surface reaction during Si molecular layer growth” J. Crystal Growth, Vol. 209, pp. 327-330, (2000).
  9. J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, “Molecular layer epitaxy of silicon,” J. Crystal Growth, Vol. 99, pp. 502-505, (1990).
  10. J. Nishizawa, K. Aoki, S. Suzuki, and K. Kikuchi, “Silicon Molecular Layer Epitaxy,” J. Electrochem. Soc., Vol. 137, pp. 1898-1904, (1990).


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